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description the AUIRF7769L2tr combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet? packaging to achieve the lowest on-state resistance in a package that has the footprint of a dpak (to-252aa) and only 0.7 mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet ? package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet power mosfet is designed for applications where efficiency and power density are essential. the advanced directfet? packaging platform coupled with the latest silicon technology allows the AUIRF7769L2tr to offer substantial system level savings and perfor- mance improvement specifically in motor drive, high frequency dc-dc and other heavy load applications on ice, hev and ev platforms. this mosfet utilizes the latest processing techniques to achieve low on-resistance and low qg per silicon area. additional features of this mosfet are 175c operating junction temperature and high repetitive peak current capability. these features combine to make this mosfet a highly efficient, robust and reliable device for high current automotive applications. applicable directfet ? outline and substrate outline automotive directfet ? power mosfet directfet ? isometric sb sc m2 m4 l4 l6 l8 d d s s s ss s ss g ? advanced process technology ? optimized for automotive motor drive, dc-dc andother heavy load applications ? exceptionally small footprint and low profile ? high power density ? low parasitic parameters ? dual sided cooling ? 175c operating temperature ? repetitive avalanche capability for robustness andreliability ? lead free, rohs compliant and halogen free ? automotive qualified * absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 100v r ds(on) typ. 2.8m max. 3.5m i d (silicon limited) 124a q g 200nc

parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (s ilicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (s ilicon limited) i d @ t a = 25c continuous drain current, v gs @ 10v (s ilicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (p ackage l i mi ted) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range max. 8820 500 20 100124 375 260 va 125 w 3.3 see fig.18a, 18b, 16, 17 270 c -55 to + 175 ordering information form quantity AUIRF7769L2 directfet2 large can tape and reel 4000 AUIRF7769L2tr complete part number base part number package type standard pack downloaded from: http:///

thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 45 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r j-can junction-to-can CCC 1.2 r j-pcb junction-to-pcb mounted CCC 0.5 linear derating factor w/c 0.83 static characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.02 CCC v/c r ds(on) static drain-to-source on-resistance CCC 2.8 3.5 m v gs(th) gate threshold voltage 2.0 2.7 4.0 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -10 CCC mv/c gfs forward transconductance 410 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic characteristics @ t j = 25c (unless otherwise stated) q g total gate charge CCC 200 300 q gs1 pre-vth gate-to-source charge CCC 30 CCC q gs2 post-vth gate-to-source charge CCC 9.0 CCC nc q gd gate-to-drain charge CCC 110 165 q godr gate charge overdrive CCC 51 CCC see fig. 9 q sw switch charge (q gs2 + q gd ) CCC 119 CCC q oss output charge CCC 53 CCC nc r g gate resistance CCC 1.5 CCC t d(on) turn-on delay time CCC 44 CCC t r ri se t i m e CC C3 2C C C t d(off) turn-off delay time CCC 92 CCC ns t f fall time CCC 41 CCC c iss input capacitance CCC 11560 CCC c oss output capacitance CCC 1240 CCC pf c rss reverse transfer capacitance CCC 590 CCC c oss output capacitance CCC 6665 CCC c oss output capacitance CCC 690 CCC diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 75 112 ns q rr reverse recovery charge CCC 220 330 nc i d = 74a v ds = 80v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 50v t j = 25c, i f = 74a, v dd = 50v di/dt = 100a/ s t j = 25c, i s = 74a, v gs = 0v showing the integral reverse p-n junction diode. v ds = 100v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 2ma v gs = 10v, i d = 74a v ds = v gs , i d = 250 a v ds = 25v, i d = 74a v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 74a mosfet symbol r g =1.8 v ds = 25v conditions v gs = 0v, v ds = 80v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz a 124500 CCC CCC CCC CCC downloaded from: http:///
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surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with smallclip heatsink (still air) notes through are on page 10 ? qualification standards can be found at international rectifiers web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? large-can msl1 charged device model n/ a (per aec-q101-005) moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualificatio n. irs industrial and consumer qualification level is granted by extension of the higher automotive level. rohs compliant yes esd machine model class m4 (+/- 800v) ??? (per aec-q101-002) human body model class h3a (+/- 6000v) ??? (per aec-q101-001) downloaded from: http:///

fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 3.5v vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 3.5v vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.0v bottom 3.5v 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 60 s pulse width t j = 175c t j = 25c t j = -40c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 74a v gs = 10v 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs , gate-to-source voltage (v) 0 2 4 6 8 10 typical r ds (on), (m ) t j = 25c t j = 125c i d = 74a 20 40 60 80 100 i d , drain current (a) 2.8 2.9 3.0 3.1 t y p i c a l r d s ( o n ) ( m ) t a = 25c v gs = 8.0v v gs = 7.0v v gs = 10v v gs = 15v downloaded from: http:///
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fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250 a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 175c t j = 25c t j = -40c 0 20 40 60 80 100 120 140 160 i d ,drain-to-source current (a) 0 100 200 300 400 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 5v 380 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 50 100 150 200 250 300 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 74a 25 50 75 100 125 150 175 t c , casetemperature (c) 0 25 50 75 100 125 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
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fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 13a 20a bottom 74a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.1080 0.0001710.6140 0.053914 0.4520 0.006099 1.47e-05 0.036168 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
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fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 13, 14:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 240 280 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 74a downloaded from: http:///
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please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations note: for the most current drawing please refer to ir website at http://www.irf.com/package fig 21.
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&'( for hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period )))

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g = gate d = drain s = source g dd dd d d sss s s ss s downloaded from: http:///
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please see an-1035 for directfet ? assembly details and stencil and substrate design recommendations automotive directfet? part marking note: for the most current drawing please refer to ir website at http://www.irf.com/package "au" = gate and automotive marking part number logo batch number date code line above the last character of the date code indicates "lead-free" code ab cd e f gh j k l m r p 0.017 0.029 0.003 0.007 0.057 0.104 0.236 0.048 0.026 0.024 max 0.360 0.280 0.38 0.68 0.02 0.09 1.35 2.55 5.90 1.18 0.55 0.58 min 9.05 6.85 0.42 0.74 0.08 0.17 1.45 2.65 6.00 1.22 0.65 0.62 max 9.15 7.10 0.015 0.027 0.003 0.001 0.100 0.053 0.232 0.046 0.023 0.022 min 0.270 0.356 metric imperial dimensions 0.98 1.02 0.73 0.77 0.040 0.039 0.030 0.029 l1 0.215 5.35 5.45 0.211 downloaded from: http:///

automotive directfet? tape & reel dimension (showing component orientation). note: for the most current drawing please refer to ir website at http://www.irf.com/package click on this section to link to the appropriate technical paper. click on this section to link to the directfet ? website.
surface mounted on 1 in. square cu board, steady state.
t c measured with thermocouple mounted to top (drain) of part.
repetitive rating; pulse width limited by max. junction temperature. #!$ starting t j = 25c, l = 0.09mh, r g = 25 , i as = 74a.
pulse width 400 s; duty cycle 2%.

used double sided cooling, mounting pad with large heatsink.
mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. loaded tape feed direction note: controlling dimensions in mm code ab cd e f g h imperial min 4.69 0.154 0.623 0.291 0.283 0.390 0.059 0.059 max 12.10 4.10 16.30 7.60 7.40 10.10 n.c 1.60 min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 metric dimensions max 0.476 0.161 0.642 0.299 0.291 0.398 n.c 0.063 reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. (ordered as AUIRF7769L2tr). max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric downloaded from: http:///

unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir)reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod- ucts and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this informa- tion with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyers own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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